导语
内容提要
中国科学院半导体研究所编的《惟实求真(王圩院士文集)》梳理和总结了王圩院士的科研成果和学术思想,主要收集了他在国内外高水平期刊上发表的具有代表性的论文,展示了他近60年来在半导体光电子学学科所取得的成绩和在该领域达到的科学水平;同时,体现了他严谨审慎、一丝不苟的治学态度和学术风格,是他致力于前瞻性、开创性科研学术活动的一个例证,也是他教书育人、奉献祖国半导体事业的生动记录。
本书为中国科学院半导体研究所提供了宝贵的图文资料。可供从事半导体事业的科技工作者参考。
目录
序
王老师回忆文章
忆和二姐相处的日子
同事朋友学生回忆文章
与半导体所共同成长的王圩和所在团队
老同学、老战友、老老板
楷模和榜样——王圩院士80岁华诞有感
毕生中国“芯”,包容学生情
学术导师.为人楷模
学术论文集
内光栅反馈型动态单频DFB/DBR激光器
1.55txm InGaAs/InP单模激光器的研究和发展
室温连续激射的1.55μm质子轰击条形InGaAsP/InP激光器
1.55μm掩埋条形InGaAsP/InP激光器
1.3Ixm低阈值大功率基横模BH InGaAsP/InP激光器
A Modified 1.5μm GalnAsP/InP Bundle-Integrated-Guide Distributed-Bragg-Reflector
(BIG-DBR)Laser wlth an Inner Island Substrate
用于1.55μm InGaAsP/InP DFB激光器的A/4相移衍射光栅
1.55μm InGaAsP/InP RW-DFB laser
1.5μm光栅反馈型动态单模激光器
低阈值1.5μm平面掩埋脊型(PBR)分布反馈激光器
InGaAsP/InP掩埋条形激光器的漏电流分析
InGaAsP/InP PFBH激光器
A 1.3 l Ixm novel complex-coupled MQW-DFB laser by modulated distribution
of injection current
1.27Ixm吸收型部分增益耦合MQW-DFB激光器
LP-MOVPE生长的1.3Ixm InGaAsWInP张压应变交替MQW特性
1.3μm InGaAsP/InP应变多量子阱部分增益耦合DFB激光器
光纤光栅作为外反馈的混合腔半导体激光器
浅离子注入InGaAs/InGaAsP SL-MQW激光器的混合蓝移效应
生长温度对长波长InWAlGalnAs/InP材料LP-MOCVD生长的影响
半绝缘InP的优化生长条件以及掩埋的1.55ixm激光器
A Novel Non-uniform Two-section DFB Semiconductor Laser for Wavelength Tuning
Bragg光栅在光子集成器件中的应用及研制
用光纤光栅作外反馈的可调谐外腔半导体激光器
选区外延制作单片集成单脊条形电吸收调制DFB激光器
低波长漂移的电吸收调制DFB激光器
High Extinction Ration Polarization Independent EA Modulator
窄条宽MOCVD选区生长InP系材料的速率增强因子
渐变应变偏振不灵敏半导体光学放大器
Tunable Distributed Bragg Reflector Laser Fabricated by Bundle Integrated Guide
Selective-area MOCVD growth for distributed feedback lasers integrated with vertically
tapered self-aligned waveguide
Measurement of 3dB Bandwidth of Laser Diode Chips
多量子阱电吸收调制DFB激光器的一种新型LP-MOCVD对接生长方法
Semiconductor optical amplifier optical gate with graded strained bulk-like active structure
第1讲布拉格衍射效应在半导体光电子器件中的应用与发展
A 1.3 Ixm Low-Threshold Edge-Emitting Laser with AllnAs—Oxide Confinement Layers
MOVPE growth of grade-strained bulk InGaAs/InP for broad-band optoelectronic device applications
A Novel Extremely Broadband Superluminescent Diode Based on Symmetric Graded
Tensile-strained Bulk InGaAs
用于光纤通信的1.551xm DFB激光器的可靠性分析
10Gbit/s高T。无制冷分布反馈激光器
A Wavelength Tunable DBR Laser Integrated with an Electro-Absorption Modulator
by a Combined Method of SAG and QWI
Lossless Electroabsorption Modulator Monolithically Integrated With a Semiconductor
Optical Amplifier and Dual-Waveguide Spot-Size Converters
1.55 jxm Ridge DFB Laser Integrated With a Buried-Ridge-Stripe Dual-Core Spot-Size
Converter by Quantum-Well Intermixing
Widely Tunable Sampled-Grating DBR Laser
Compressively Strained InGaAs/InGaAsP Quantum Well Distributed Feedback Laser at 1.74txm
10Gbit·S-1 electroabsorption-modulated laser light-source module using selective area MOVPE
Comparative study of InAs quantum dots grown on different GaAs substrates by MOCVD
Dual-Wavelength Distributed Feedback Laser for CWDM Based on Non-Identical Quantum Well
Low-Microwave Loss Coplanar Waveguides Fabricated on High-Resistivity Silicon Substrate
Monolithic integration of electroabsorption modulator and DFB laser for 10Gb/s transmission
Selective growth of absorptive InGaAsP layer on InP corrugation for a buried grating structure
低能氦离子注入引入的量子阱混杂带隙波长蓝移
Monolithically Integrated Transceiver with Novel Y-Branch by Bundle Integrated
Waveguide for Fibre Optic Gyroscope
40Gb/s Low Chirp Electroabsorption Modulator Integrated With DFB Laser
Design of novel three port opticN gates scheme for the integration of large optical
cavity electroabsorption modulators and evanescently—coupled photodiodes
All-Optical Clock Recovery for 20Gb/s Using an Amplified Feedback DFB Laser
Design and Characterization of Evanescently Coupled Uni—Traveling Carrier Photodiodes
with a Multimode Diluted Waveguide Structure
DC Characterizations of MQW Tunnel Diode and Laser Diode Hybrid Integration Device
Monolithic integration of electroabsorption modulators and tunnel injection distributed
feedback lasers using quantum well intermixing
A modified SAG technique for the fabrication of DWDM DFB laser arrays with highly
uniform wavelength spacings
附录
获奖情况
大事记(年鉴)
桃李满天下
后记